SI4946BEY Datasheet, PDF (3/10 Pages) Vishay Siliconix – Dual N-Channel 60-V (D-S) 175 ˚C MOSFET

Si4946BEY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
30
10
V_GS = 10 V thru 5 V
25
8
20
4V
15
10
5
3V
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
6
4
T_C = 150 °C
2
25 °C
- 55 °C
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
0.100
1200
0.080
0.060
0.040
V_GS = 4.5 V
0.020
V_GS = 10 V
0.000
0
5
10
15
20
25
30
I_D - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
10
I_D = 5.3 A
8
V_DS = 30 V
6
V_DS = 48 V
4
2
0
0
4
8
12
16
20
Q_g - Total Gate Charge (nC)
Gate Charge
1000
C_iss
800
600
400
200
C_oss
0 ^Crss
0
10
20
30
40
50
60
V_DS - Drain-to-Source Voltage (V)
Capacitance
2.2
I_D = 5.3 A
2.0
1.8
V_GS = 10 V
1.6
1.4
V_GS = 4.5 V
1.2
1.0
0.8
0.6
- 50 - 25 0
25 50 75 100 125 150 175
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 73411
S09-2434-Rev. C, 16-Nov-09
www.vishay.com
3