SI4904DY Datasheet, PDF (3/10 Pages) Vishay Siliconix – Dual N-Channel 40-V MOSFET

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
20
1.2
V_GS = 10 thru 3 V
1.0
16
0.8
12
0.6
8
0.4
4
2V
0.2
0
0.0
0.6
1.2
1.8
2.4
3.0
V_DS – Drain-to-Source Voltage (V)
Output Characteristics
0.0
0.0
0.020
3500
Si4904DY
Vishay Siliconix
T_C = 125 °C
25 °C
- 55 °C
0.6
1.2
1.8
2.4
3.0
V_GS – Gate-to-Source Voltage (V)
Transfer Characteristics
0.018
0.016
0.014
0.012
V_GS = 4.5 V
V_GS = 10 V
0.010
0
4
8
12
16
20
I_D – Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
10
I_D = 5 A
8
V_DS = 10 V
6
V_DS = 20 V
4
V_DS = 30 V
2
2800
C_iss
2100
1400
700
C_oss
C_rss
0
0
8
16
24
32
40
V_DS – Drain-to-Source Voltage (V)
Capacitance
1.8
I_D = 5 A
1.5
V_GS = 10 V
V_GS = 4.5 V
1.2
0.9
0
0
12
24
36
48
60
Q_g – Total Gate Charge (nC)
Gate Charge
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J – Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 73793
S09-0540-Rev. C, 06-Apr-09
www.vishay.com
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