SI4866BD Datasheet, PDF (3/10 Pages) Vishay Telefunken – N-Channel 12-V (D-S) MOSFET

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
50
2.0
1.5 V
40
1.6
30
1.2
Si4866BDY
Vishay Siliconix
25 °C
20
0.8
T_C = 125 °C
10
1V
0
0.0
0.5
1.0
1.5
2.0
2.5
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
0.0065
0.0060
V_GS = 1.8 V
0.0055
0.0050
V_GS = 2.5 V
0.0045
V_GS = 4.5 V
0.0040
0
10
20
30
40
50
I_D - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
4.5
I_D = 10 A
3.6
2.7
V_DS = 4 V
V_DS = 6 V
1.8
V_DS = 8 V
0.9
0.4
0.0
0.0
7000
- 55 °C
0.3
0.6
0.9
1.2
1.5
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
5600
C_iss
4200
2800
1400
0
0
C_rss
2
4
C_oss
6
8
10
12
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.5
I_D = 12 A
1.3
V_GS = 1.8 V
V_GS = 4.5 V
1.1
0.9
0.0
0
11
22
33
44
55
Q_g - Total Gate Charge (nC)
Gate Charge
Document Number: 70341
S09-0540-Rev. B, 06-Apr-09
0.7
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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