SI4776DY Datasheet, PDF (3/10 Pages) Vishay Siliconix – N-Channel 30 V (D-S) MOSFET with Schottky Diode

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
50
10
V_GS = 10 V thru 4 V
40
8
Si4776DY
Vishay Siliconix
30
20
10
0
0.0
0.020
V_GS = 3 V
V_GS = 2 V
0.5
1.0
1.5
2.0
2.5
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
6
T_C = 25 °C
4
2
T_C = 125 °C
T_C = - 55 °C
0
0.0
1.0
2.0
3.0
4.0
5.0
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
700
0.018
0.016
V_GS = 4.5 V
560
C_iss
420
0.014
0.012
V_GS = 10 V
280
C_oss
140
C_rss
0.010
0
10
20
30
40
50
I_D - Drain Current (A)
On-Resistance vs. Drain Current
10
I_D = 10 A
8
6
V_DS = 15 V
V_DS = 10 V
4
V_DS = 20 V
2
0
0
2
4
6
8
10
12
Q_g - Total Gate Charge (nC)
Gate Charge
0
0
5
10
15
20
25
30
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.8
I_D = 10 A
1.6
1.4
1.2
V_GS = 10 V
V_GS = 4.5 V
1.0
0.8
0.6
- 50 - 25 0 25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 63316
www.vishay.com
S11-1658-Rev. A, 15-Aug-11
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000