SIHLI520G Datasheet, PDF (2/8 Pages) Vishay Telefunken – Power MOSFET

IRLI520G, SiHLI520G
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
R_thJA
R_thJC
TYP.
-
-
MAX.
65
4.1
UNIT
°C/W
SPECIFICATIONS T_J = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage
V_DS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
V_DS
ΔV_DS/T_J
V_GS(th)
I_GSS
I_DSS
R_{DS (on)}
g_fs
V_GS = 0 V, I_D = 250 µA
Reference to 25 °C, I_D = 1 mA
V_DS = V_GS, I_D = 250 µA
V_GS = ± 10 V
V_DS = 100 V, V_GS = 0 V
V_DS = 80 V, V_GS = 0 V, T_J = 150 °C
V_GS = 5 V
I_D = 4.3 A^b
V_GS = 4 V
I_D = 3.6 A^b
V_DS = 50 V, I_D = 4.3 A^b
100
-
-
V
-
0.12
-
V/°C
1.0
-
2.0
V
-
-
± 100 nA
-
-
25
µA
-
-
250
-
-
0.27
Ω
-
-
0.38
3.3
-
-
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Drain to Sink Capacitance
C_iss
C_oss
C_rss
C
V_GS = 0 V,
V_DS = 25 V,
f = 1.0 MHz, see fig. 5
f = 1.0 MHz
-
490
-
-
150
-
pF
-
30
-
-
12
-
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
L_D
L_S
-
V_GS = 5 V
I_D = 9.2 A, V_DS = 80 V,
see fig. 6 and 13^b
-
-
-
12
-
3.0
nC
-
7.1
V_DD = 50 V, I_D = 9.2 A,
R_G = 9 Ω_, R_D= 5.2 Ω,
see fig. 10^b
-
9.8
-
-
64
-
ns
-
21
-
-
27
-
Between lead,
6 mm (0.25") from
package and center of
die contact
D
G
S
-
4.5
-
nH
-
7.5
-
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
I_S
MOSFET symbol
showing the
Pulsed Diode Forward Current^a
integral reverse
I_SM
p - n junction diode
D
G
S
-
-
7.2
A
-
-
29
Body Diode Voltage
V_SD
T_J = 25 °C, I_S = 7.2 A, V_GS = 0 V^b
-
-
2.5
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
t_rr
-
130
190
ns
T_J = 25 °C, I_F = 9.2 A, dI/dt = 100 A/µs^b
Q_rr
-
0.83 1.0
µC
Forward Turn-On Time
t_on
Intrinsic turn-on time is negligible (turn-on is dominated by L_S and L_D)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
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Document Number: 90397
S-82994-Rev. A, 12-Jan-09