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SIHFP048 Datasheet, PDF (2/9 Pages) Vishay Telefunken – Power MOSFET
◁
IRFP048, SiHFP048
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
RthJA
Case-to-Sink, Flat, Greased Surface
RthCS
Maximum Junction-to-Case (Drain)
RthJC
TYP.
-
0.24
-
MAX.
40
-
0.80
UNIT
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
VDS
ΔVDS/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
VGS = 0 V, ID = 250 μA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 μA
VGS = ± 20 V
VDS = 60 V, VGS = 0 V
VDS = 48 V, VGS = 0 V, TJ = 150 °C
VGS = 10 V
ID = 44 Ab
VDS = 25 V, ID = 44 Ab
60
-
-
V
-
0.060
-
V/°C
2.0
-
4.0
V
-
-
± 100 nA
-
-
25
μA
-
-
250
-
-
0.018 Ω
20
-
-
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LD
Internal Source Inductance
LS
Drain-Source Body Diode Characteristics
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5
-
2400
-
-
1300
-
pF
-
190
-
-
VGS = 10 V
ID = 72 A, VDS = 48 V
see fig. 6 and 13b
-
-
-
110
-
29
nC
-
38
-
8.1
-
VDD = 30 V, ID = 72 A,
Rg = 9.1 Ω, RD = 0.34 Ω, see fig. 10b
-
250
-
ns
-
210
-
-
250
-
Between lead,
6 mm (0.25") from
package and center of
die contact
D
G
S
-
5.0
-
nH
-
13
-
Continuous Source-Drain Diode Current
Pulsed Diode Forward Currenta
IS
MOSFET symbol
showing the
integral reverse
ISM
p - n junction diode
D
G
S
-
-
70c
A
-
-
290
Body Diode Voltage
VSD
TJ = 25 °C, IS = 73 A, VGS = 0 Vb
-
-
2.0
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
trr
TJ = 25 °C, IF = 72 A, dI/dt = 100 A/μsb
-
120
180
ns
Qrr
-
0.50 0.80 μC
Forward Turn-On Time
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %.
c. Current limited by the package (die current = 73 A).
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Document Number: 91198
S11-0447-Rev. B, 14-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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