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SIHFD020 Datasheet, PDF (2/9 Pages) Vishay Telefunken – Power MOSFET
◁
IRFD020, SiHFD020
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
RthJA
TYP.
-
MAX.
120
UNIT
°C/W
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Currentb
Drain-Source On-State Resistanceb
Forward Transconductanceb
Dynamic
VDS
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gfs
VGS = 0 V, ID = 250 μA
VDS = VGS, ID = 250 μA
VGS = ± 20 V
VDS = max. rating, VGS = 0 V
VDS = max. rating x 0.8, VGS = 0 V, TC = 125
VGS = 10 V VDS > ID(on) x RDS(on) max.
VGS = 10 V
ID = 1.4 A
VDS = 20 V, ID = 7.5 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz
VGS = 10 V
ID = 15 A,
VDS = max. rating x 0.8
VDD = 25 V, ID = 15 A,
Rg = 18 , RD = 1.7 
Internal Drain Inductance
Internal Source Inductance
LD
Between lead,
6 mm (0.25") from
D
package and center of
G
LS
die contact
S
Drain-Source Body Diode Characteristics
MIN.
50
2.0
-
-
-
2.4
-
4.9
-
-
-
-
-
-
-
-
-
-
-
-
TYP. MAX. UNIT
-
-
V
-
4.0
V
-
± 500 nA
-
250
μA
-
1000
-
-
A
0.080 0.10

7.3
-
S
400
-
260
-
pF
44
-
16
24
4.7
7.1
nC
4.7
7.1
8.7
13
55
83
ns
16
24
26
39
4.0
-
nH
6.0
-
Continuous Source-Drain Diode Current
IS
MOSFET symbol
showing the
integral reverse
Pulsed Diode Forward Currentc
ISM
p - n junction diode
D
G
S
-
-
2.4
A
-
-
19
Body Diode Voltagea
VSD
TC = 25 °C, IS = 2.4 A, VGS = 0 V
-
-
1.4
V
Body Diode Reverse Recovery Time
trr
57
130
310
ns
TJ = 25 °C, IF = 15 A, dI/dt = 100 A/μs
Body Diode Reverse Recovery Charge
Qrr
0.17 0.34 0.85 μC
Forward Turn-On Time
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width  300 μs; duty cycle  2 %.
c. VDD = 25 V, starting TJ = 25 °C, L = 100 μH, Rg = 25 
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Document Number: 91465
S11-0915-Rev. A, 16-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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