SI4630DY Datasheet, PDF (2/10 Pages) Vishay Siliconix – N-Channel 25-V (D-S) MOSFET

Si4630DY
Vishay Siliconix
SPECIFICATIONS T_J = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
V_DS Temperature Coefficient
V_GS(th) Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current^a
Drain-Source On-State Resistance^a
Forward Transconductance^a
Dynamic^b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
V_DS
ΔV_DS/T_J
ΔV_GS(th)/T_J
V_GS(th)
I_GSS
I_DSS
I_D(on)
R_DS(on)
g_fs
C_iss
C_oss
C_rss
Q_g
V_GS = 0 V, I_D = 250 µA
I_D = 250 µA
V_DS = V_GS, I_D = 250 µA
V_DS = 0 V, V_GS = ± 16 V
V_DS = 25 V, V_GS = 0 V
V_DS = 25 V, V_GS = 0 V, T_J = 55 °C
V_DS ≥ 5 V, V_GS = 10 V
V_GS = 10 V, I_D = 20 A
V_GS = 4.5 V, I_D = 15 A
V_DS = 15 V, I_D = 20 A
V_DS = 15 V, V_GS = 0 V, f = 1 MHz
V_DS = 15 V, V_GS = 10 V, I_D = 20 A
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
Drain-Source Body Diode Characteristics
Continous Source-Drain Diode Current
Pulse Diode Forward Current^a
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
Q_gs
Q_gd
R_g
t_d(on)
t_r
t_d(off)
t_f
t_d(on)
t_r
t_d(off)
t_f
I_S
I_SM
V_SD
t_rr
Q_rr
t_a
t_b
V_DS = 15 V, V_GS = 4.5 V, I_D = 20 A
f = 1 MHz
V_DD = 15 V, R_L = 1.5Ω
I_D ≅ 10 A, V_GEN = 4.5 V, R_g = 1 Ω
V_DD = 15 V, R_L = 1.5 Ω
I_D ≅ 10 A, V_GEN = 10 V, R_g = 1 Ω
T_C = 25 °C
I_S = 3 A
I_F = 13 A, dI/dt = 100 A/µs, T_J = 25 °C
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Min.
25
1.0
30
Typ.
28
-6
0.0022
0.0026
120
6670
997
531
107.5
49
15.7
13.6
1.5
37
122
47
15
17
93
60
9
0.72
47
50
23
24
Max.
2.2
± 100
1
10
0.0027
0.0032
161
73
2.25
56
185
71
23
26
140
90
15
7
70
1.1
70
75
Unit
V
mV/°C
V
nA
µA
A
Ω
S
pF
nC
Ω
ns
A
V
ns
nC
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 73685
S09-0138-Rev. C, 02-Feb-09