SI4559ADY Datasheet, PDF (10/15 Pages) Vishay Siliconix – N- and P-Channel 60-V (D-S) MOSFET

Si4559ADY
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
25
50
75
100
125
150
T_C - Case Temperature (°C)
Current Derating*
100
25
50
75
100 125 150
T_C - Case Temperature (°C)
Power Derating, Junction-to-Foot
10
T_A
=
L.
BV -
I_D
V_DD
1
0.000001
0.00001
0.0001
0.001
T_A - Time In Avalanche (s)
Single Pulse Avalanche Capability
* The power dissipation P_D is based on T_J(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
www.vishay.com
10
Document Number: 73624
S09-0393-Rev. B, 09-Mar-09