SIR492DP Datasheet, PDF (1/14 Pages) Vishay Siliconix – N-Channel 12-V (D-S) MOSFET

New Product
N-Channel 12-V (D-S) MOSFET
SiR492DP
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
12
0.0038 at V_GS = 4.5 V
0.0047 at V_GS = 2.5 V
I_D (A)^e
40
40
Q_g (Typ.)
41 nC
PowerPAK SO-8
6.15 mm
D
8
D
7
D
6
D
5
S
1
S
5.15 mm
2
S
3
G
4
Bottom View
Ordering Information: SiR492DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
• Halogen-free
• TrenchFET^® Power MOSFET
• Low Thermal Resistance PowerPAK^®
RoHS
COMPLIANT
Package with Small Size and Low 1.07 mm Profile
• 100 % R_g Tested
APPLICATIONS
• Secondary Synchronous Rectification
• Point-of-Load
• Load Switch
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
12
V
V_GS
±8
T_C = 25 °C
40^e
Continuous Drain Current (T_J = 150 °C)
T_C = 70 °C
T_A = 25 °C
I_D
35^e
27^{a, b}
T_A = 70 °C
21.6^{a, b}
A
Pulsed Drain Current
I_DM
60
Continuous Source-Drain Diode Current
T_C = 25 °C
T_A = 25 °C
I_S
30
3.5^{a, b}
T_C = 25 °C
36
Maximum Power Dissipation
T_C = 70 °C
T_A = 25 °C
P_D
23
4.2^{a, b}
W
T_A = 70 °C
2.7^{a, b}
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)^{c, d}
T_J, T_stg
- 50 to 150
°C
260
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
d. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
e. Package limited, pulse time ≤ 200 ms.
Document Number: 68840
S-82288-Rev. B, 22-Sep-08
www.vishay.com
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