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SIR410D Datasheet, PDF (1/13 Pages) Vishay Telefunken – N-Channel 20-V (D-S) MOSFET
N-Channel 20-V (D-S) MOSFET
SiR410DP
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.0048 at VGS = 10 V
20
0.0063 at VGS = 4.5 V
ID (A)a
35
35
Qg (Typ.)
12.7 nC
FEATURES
• Halogen-free
• TrenchFET® Power MOSFET
• 100 % Rg Tested
• 100 % UIS Tested
PowerPAK® SO-8
6.15 mm
D
8
D
7
D
6
D
5
S
1
S
5.15 mm
2
S
3
G
4
APPLICATIONS
• DC/DC Converter
- Notebook
- POL
D
G
Bottom View
Ordering Information: SiR410DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
20
V
VGS
± 20
TC = 25 °C
35a
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
ID
TA = 70 °C
35a
23b, c
18.6b, c
A
Pulsed Drain Current
IDM
60
Avalanche Current
Avalanche Energy
L = 0.1 mH
IAS
35
EAS
61
mJ
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
IS
30
3.5b, c
A
TC = 25 °C
36
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
PD
23
4.2b, c
W
TA = 70 °C
2.7b, c
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
TJ, Tstg
- 55 to 150
260
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, f
Maximum Junction-to-Case (Drain)
t ≤ 10 s
Steady State
Symbol
RthJA
RthJC
Typical
25
2.9
Maximum
30
3.5
Unit
°C/W
Notes:
a. Package Limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 70 °C/W.
Document Number: 68997
S-82586-Rev. A, 27-Oct-08
www.vishay.com
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