SIHLZ44S Datasheet, PDF (1/9 Pages) Vishay Telefunken – Power MOSFET

Power MOSFET
IRLZ44S, SiHLZ44S
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
R_DS(on) ()
60
V_GS = 5.0 V
Q_g (Max.) (nC)
66
Q_gs (nC)
12
Q_gd (nC)
43
Configuration
Single
0.028
D
D²PAK (TO-263)
G
GD
S
S
N-Channel MOSFET
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• Surface Mount
• Available in Tape and Reel
• Dynamic dV/dt Rating
• Logic-Level Gate Drive
• R_DS(on) Specified at V_GS = 4 V and 5 V
• 175 °C Operating Temperature
• Fast Switching
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The D²PAK (TO-263) is a surface mount power package
capable of accommodating die sizes up to HEX-4. It
provides the highest power capability and the lowest
possible on-resistance in any existing surface mount
package. The D²PAK (TO-263) is suitable for high current
applications because of its low internal connection
resistance and can dissipate up to 2.0 W in a typical surface
mount application.
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
Lead (Pb)-free
Note
a. See device orientation.
D²PAK (TO-263)
SiHLZ44S-GE3
IRLZ44SPbF
SiHLZ44S-E3
ABSOLUTE MAXIMUM RATINGS (T_C = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current^f
Continuous Drain Current
Pulsed Drain Current^a
Linear Derating Factor
Linear Derating Factor (PCB Mount)^e
Single Pulse Avalanche Energy^b
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount)^e
Peak Diode Recovery dV/dt^c
V_DS
V_GS
V_GS at 5.0 V
T_C = 25 °C
T_C = 100 °C
I_D
I_DM
T_C = 25 °C
T_A = 25 °C
E_AS
P_D
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)^d
for 10 s
T_J, T_stg
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V_DD = 25 V, starting T_J = 25 °C, L = 179 μH, R_g = 25 , I_AS = 51 A (see fig. 12).
c. I_SD  51 A, dI/dt  250 A/μs, V_DD  V_DS, T_J  175 °C.
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
f. Current limited by the package, (die current = 51 A).
D²PAK (TO-263)
SiHLZ44STRR-GE3^a
IRLZ44STRRPbF^a
SiHLZ44STR-E3^a
LIMIT
60
± 10
50
36
200
1.0
0.025
400
150
3.7
4.5
- 55 to + 175
300^d
UNIT
V
A
W/°C
mJ
W
V/ns
°C
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91329
S11-1055-Rev. C, 30-May-11
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000