SIHLU024 Datasheet, PDF (1/11 Pages) Vishay Telefunken – Power MOSFET

www.vishay.com
IRLR024, IRLU024, SiHLR024, SiHLU024
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
V_DS (V)
R_DS(on) ()
Q_g (Max.) (nC)
Q_gs (nC)
Q_gd (nC)
Configuration
60
V_GS = 5.0 V
18
4.5
12
Single
0.10
D
DPAK
(TO-252)
IPAK
(TO-251)
D
D
G
GS
GD ^S
S
N-Channel MOSFET
FEATURES
• Dynamic dV/dt rating
• Surface mount (IRLR024, SiHLR024)
• Straight lead (IRLU024, SiHLU024)
• Available in tape and reel
• Logic-level gate drive
Available
• R_DS(on) specified at V_GS = 4 V and 5 V
• Fast switching
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
Third generation power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The DPAK is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRLU, SiHLU series) is for through-hole
mounting applications. Power dissipation levels up to 1.5 W
are possible in typical surface mount applications.
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
Lead (Pb)-free
Note
a. See device orientation.
DPAK (TO-252)
-
IRLR024PbF
SiHLR024-E3
DPAK (TO-252)
SiHLR024TRL-GE3
-
-
DPAK (TO-252)
SiHLR024TR-GE3
IRLR024TRPbF ^a
SiHLR024T-E3 ^a
IPAK (TO-251)
SiHLU024-GE3
IRLU024PbF
SiHLU024-E3
ABSOLUTE MAXIMUM RATINGS (T_C = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current ^a
V_GS at 5.0 V
T_C = 25 °C
T_C = 100 °C
Linear Derating Factor
Linear Derating Factor (PCB Mount) ^e
Single Pulse Avalanche Energy ^b
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount) ^e
Peak Diode Recovery dV/dt ^c
T_C = 25 °C
T_A = 25 °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature) ^d
for 10 s
V_DS
V_GS
I_D
I_DM
E_AS
P_D
dV/dt
T_J, T_stg
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V_DD = 25 V, starting T_J = 25 °C, L = 541 μH, R_g = 25 , I_AS = 14 A (see fig. 12).
c. I_SD  17 A, dI/dt  140 A/μs, V_DD  V_DS, T_J  150 °C.
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
LIMIT
60
± 10
14
9.2
56
0.33
0.020
53
42
2.5
4.5
-55 to +150
260
UNIT
V
A
W/°C
mJ
W
V/ns
°C
S14-1677-Rev. E, 18-Aug-14
1
Document Number: 91322
For technical questions, contact: [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000