SIHLD120 Datasheet, PDF (1/9 Pages) Vishay Telefunken – Power MOSFET

Power MOSFET
IRLD120, SiHLD120
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
R_DS(on) ()
Q_g (Max.) (nC)
Q_gs (nC)
Q_gd (nC)
Configuration
100
V_GS = 5.0 V
12
3.0
7.1
Single
0.27
D
HVMDIP
S
G
D
G
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• For Automatic Insertion
• End Stackable
• Logic-Level Gate Drive
• R_DS(on) Specified at V_GS = 4 V and 5 V
• 175 °C Operating Temperature
• Compliant to RoHS Directive 2002/95/EC
Available
RoHS*
COMPLIANT
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The 4 pin DIP package is a low cost machine-insertable case
style which can be stacked in multiple combinations on
standard 0.1" pin centers. The dual drain serves as a thermal
link to the mounting surface for power dissipation levels up to
1 W.
HVMDIP
IRLD120PbF
SiHLD120-E3
IRLD120
SiHLD120
ABSOLUTE MAXIMUM RATINGS (T_A = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current^a
V_GS at 5.0 V
T_A = 25 °C
T_A = 100 °C
Linear Derating Factor
Single Pulse Avalanche Energy^b
Avalanche Current^a
Repetitive Avalanche Energy^a
Maximum Power Dissipation
Peak Diode Recovery dV/dt^c
T_A = 25 °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
V_DS
V_GS
I_D
I_DM
E_AS
I_AR
E_AR
P_D
dV/dt
T_J, T_stg
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V_DD = 25 V, starting T_J = 25 °C, L = 153 mH, R_g = 25 , I_AS = 2.6 A (see fig. 12).
c. I_SD  9.2 A, dI/dt  110 A/µs, V_DD  V_DS, T_J  175 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91310
S10-2465-Rev. C, 08-Nov-10
LIMIT
100
± 10
1.3
0.94
10
0.0083
690
1.3
0.13
1.3
5.5
- 55 to + 175
300^d
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
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