SIHLD024 Datasheet, PDF (1/9 Pages) Vishay Telefunken – Power MOSFET

Power MOSFET
IRLD024, SiHLD024
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
R_DS(on) ()
Q_g (Max.) (nC)
Q_gs (nC)
Q_gd (nC)
Configuration
60
V_GS = 5.0 V
18
4.5
12
Single
0.10
D
HVMDIP
S
G
D
G
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
FEATURES
• Dynamic dV/dt Rating
• For Automatic Insertion
• End Stackable
• Logic-Level Gate Drive
• R_DS(on) Specified at V_GS = 4 V and 5 V
• 175 °C Operating Temperature
• Fast Switching
• Compliant to RoHS Directive 2002/95/EC
Available
RoHS*
COMPLIANT
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The 4 pin DIP package is a low cost machine-insertiable
case style which can be stacked in multiple combinations on
standard 0.1" pin centers. The dual drain servers as a
thermal link to the mounting surface for power dissipation
levels up to 1 W.
HVMDIP
IRLD024PbF
SiHLD024-E3
IRLD024
SiHLD024
ABSOLUTE MAXIMUM RATINGS (T_A = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current^a
V_DS
V_GS
T_A = 25 °C
V_GS at 5.0 V
I_D
T_A = 100 °C
I_DM
Linear Derating Factor
Single Pulse Avalanche Energy^b
Maximum Power Dissipation
Peak Diode Recovery dV/dt^c
T_A = 25 °C
E_AS
P_D
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
T_J, T_stg
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V_DD = 25 V, starting T_J = 25 °C, L = 16 mH, R_g = 25 , I_AS = 2.5 A (see fig. 12).
c. I_SD  17 A, dI/dt  140 A/µs, V_DD  V_DS, T_J  175 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91308
S10-2465-Rev. C, 08-Nov-10
LIMIT
60
± 10
2.5
1.8
20
0.0083
91
1.3
4.5
- 55 to + 175
300^d
UNIT
V
A
W/°C
mJ
W
V/ns
°C
www.vishay.com
1