SIHFZ48R Datasheet, PDF (1/9 Pages) Vishay Telefunken – Power MOSFET

Power MOSFET
IRFZ48R, SiHFZ48R
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
60
R_DS(on) (Ω)
V_GS = 10 V
Q_g (Max.) (nC)
110
Q_gs (nC)
29
Q_gd (nC)
36
Configuration
Single
0.018
D
TO-220AB
S
D
G
G
S
N-Channel MOSFET
FEATURES
• Advanced Process Technology
• Ultra Low On-Resistance
• Dynamic dV/dt Rating
• 175 °C Operating Temperature
Available
RoHS*
COMPLIANT
• Fast Switching
• Fully Avalanche Rated
• Drop in Replacement of the SiHFZ48 for Linear/Audio
Applications
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Advanced Power MOSFETs from Vishay utilize advanced
processing techniques to achieve extremely low
on-resistance per silicon area. This benefit, combined with
the fast switching speed and ruggedized device design that
Power MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use in a
wide variety of applications.
The TO-220AB package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220AB contribute to its
wide acceptance throughout the industry.
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
TO-220AB
IRFZ48RPbF
SiHFZ48R-E3
IRFZ48R
SiHFZ48R
ABSOLUTE MAXIMUM RATINGS (T_C = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current^a
Linear Derating Factor
Single Pulse Avalanche Energy^b
Repetitive Avalanche Current^a
Repetitive Avalanche Energy^a
Maximum Power Dissipation
Peak Diode Recovery dV/dt^c
V_GS at 10 V
T_C = 25 °C
T_C = 100 °C
T_C = 25 °C
V_DS
V_GS
I_D
I_DM
E_AS
I_AR
E_AR
P_D
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
T_J, T_stg
Mounting Torque
6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V_DD = 25 V, starting T_J = 25 °C, L = 22 μH, R_g = 25 Ω I_AS = 72 A (see fig. 12).
c. I_SD ≤ 72 A, dV/dt ≤ 200 A/μs, V_DD ≤ V_DS, T_J ≤ 175 °C.
d. 1.6 mm from case.
LIMIT
60
± 20
50
50
290
1.3
100
50
19
190
4.5
- 55 to + 175
300^d
10
1.1
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
lbf · in
N·m
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91295
S11-0518-Rev. B, 21-Mar-11
www.vishay.com
1
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000