SIHFZ20 Datasheet, PDF (1/9 Pages) Vishay Telefunken – Power MOSFET

Power MOSFET
IRFZ20, SiHFZ20
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
R_DS(on) ()
Q_g (Max.) (nC)
Q_gs (nC)
Q_gd (nC)
Configuration
50
V_GS = 10 V
17
9.0
3.0
Single
0.10
D
TO-220AB
S
D
G
G
S
N-Channel MOSFET
FEATURES
• Extremely Low R_DS(on)
• Compact Plastic Package
• Fast Switching
• Low Drive Current
• Ease of Paralleling
• Excellent Temperature Stability
• Parts Per Million Quality
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
The technology has expanded its product base to serve the
low voltage, very low R_DS(on) MOSFET transistor
requirements. Vishay’s highly efficient geometry and
unique processing have been combined to create the lowest
on resistance per device performance. In addition to this
feature all have documented reliability and parts per million
quality!
The transistor also offer all of the well established
advantages of MOSFETs such as voltage control, very fast
switching, ease of paralleling, and temperature stability of
the electrical parameters.
They are well suited for applications such as switching
power supplies, motor controls, inverters, choppers, audio
amplifiers, high energy pulse circuits, and in systems that
are operated from low voltage batteries, such as
automotive, portable equipment, etc.
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
TO-220AB
IRFZ20PbF
SiHFZ20-E3
IRFZ20
SiHFZ20
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Drain-Source Voltage^a
Gate-Source Voltage^a
Continuous Drain Current
Pulsed Drain Current^b
V_GS at 10 V
T_C = 25 °C
T_C = 100 °C
Single Pulse Avalanche Energy^c
Linear Derating Factor (see fig. 16)
Maximum Power Dissipation (see fig. 16)
Operating Junction and Storage Temperature Range
T_C = 25 °C
Soldering Recommendations (Peak Temperature)
for 10 s
SYMBOL
V_DS
V_GS
I_D
I_DM
E_AS
P_D
T_J, T_stg
LIMIT
50
± 20
15
10
60
5
0.32
40
- 55 to + 150
300 (0.063" (1.6 mm) from case
Notes
a. T_J = 25 °C to 150 °C
b. Repeditive rating: Pulse width limited by max. junction temperature. See transient temperature impedance curve (see fig. 11).
c. Starting T_J = 25 °C, L = 0.07 mH, R_g = 25 , I_AS = 12 A
UNIT
V
A
mJ
W/°C
W
°C
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91340
S10-1682-Rev. A, 26-Jul-10
www.vishay.com
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