SIHFR024 Datasheet, PDF (1/11 Pages) Vishay Telefunken – Power MOSFET

www.vishay.com
IRFR024, IRFU024, SiHFR024, SiHFU024
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
V_DS (V)
R_DS(on) ()
Q_g (Max.) (nC)
Q_gs (nC)
Q_gd (nC)
Configuration
60
V_GS = 10 V
25
5.8
11
Single
0.10
D
DPAK
(TO-252)
IPAK
(TO-251)
D
D
G
S
G
GD ^S
S
N-Channel MOSFET
FEATURES
• Dynamic dV/dt Rating
• Surface Mount (IRFR024, SiHFR024)
• Straight Lead (IRFU024, SiHFU024)
• Available in Tape and Reel
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
Third generation power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The DPAK is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRFU, SiHFU series) is for through-hole
mounting applications. Power dissipation levels up to 1.5 W
are possible in typical surface mount applications.
ORDERING INFORMATION
Package
DPAK (TO-252)
Lead (Pb)-free and Halogen-free
SiHFR024-GE3
Lead (Pb)-free
IRFR024PbF
SiHFR024-E3
Note
a. See device orientation.
DPAK (TO-252)
SiHFR024TR-GE3
IRFR024TRPbF^a
SiHFR024T-E3^a
DPAK (TO-252)
SiHFR024TRL-GE3
-
-
IPAK (TO-251)
SiHFU024-GE3
IRFU024PbF
SiHFU024-E3
ABSOLUTE MAXIMUM RATINGS (T_C = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current^a
Linear Derating Factor
V_DS
V_GS
V_GS at 10 V
T_C = 25 °C
T_C = 100 °C
I_D
I_DM
Linear Derating Factor (PCB Mount)^e
Single Pulse Avalanche Energy^b
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount)^e
Peak Diode Recovery dV/dt^c
T_C = 25 °C
T_A = 25 °C
E_AS
P_D
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)^d
for 10 s
T_J, T_stg
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V_DD = 25 V, starting T_J = 25 °C, L = 541 μH, R_g = 25 , I_AS = 14 A (see fig. 12).
c. I_SD  17 A, dI/dt  110 A/μs, V_DD  V_DS, T_J  150 °C.
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
LIMIT
60
± 20
14
9.0
56
0.33
0.020
91
42
2.5
5.5
- 55 to + 150
260
UNIT
V
A
W/°C
mJ
W
V/ns
°C
S13-0170-Rev. D, 04-Feb-13
1
Document Number: 91264
For technical questions, contact: [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000