SIHFD113 Datasheet, PDF (1/8 Pages) Vishay Telefunken – Power MOSFET

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IRFD113, SiHFD113
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
Q_g (Max.) (nC)
Q_gs (nC)
Q_gd (nC)
Configuration
60
V_GS = 10 V
0.8
7
2
7
Single
HVMDIP
S
G
D
D
G
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
FEATURES
• For Automatic Insertion
• Compact Plastic Package
• End Stackable
• Fast Switching
• Low Drive Current
• Easily Paralleled
• Excellent Temperature Stability
• Compliant to RoHS Directive 2002/95/EC
Note
* Pb containing terminations are not RoHS compliant, exemptions
may apply
DESCRIPTION
The HVMDIP technology is the key to Vishay’s advanced
line of power MOSFET transistors. The efficient geometry
and unique processing of the HVMDIP design achieves
very low on-state resistance combined with high
transconductance and extreme device ruggedness.
HVMDIPs feature all of the established advantages of
MOSFETs such as voltage control, very fast switching, ease
of paralleling, and temperature stability of the electrical
parameters.
The HVMDIP 4 pin, dual-in-line package brings the
advantages of HVMDIPs to high volume applications where
automatic PC board insertion is desireable, such as circuit
boards for computers, printers, telecommunications
equipment, and consumer products. Their compatibility with
automatic insertion equipment, low-profile and end
stackable features represent the stat-of-the-art in power
device packaging.
HVMDIP
IRFD113PbF
SiHFD113-E3
ABSOLUTE MAXIMUM RATINGS (T_C = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage^a
V_DS
Gate-Source Voltage
V_GS
Continuous Drain Current
Pulsed Drain Current^b
V_GS at 10 V T_C = 25 °C
I_D
I_DM
Linear Derating Factor
Inductive Current, Clamped
Maximum Power Dissipation
L = 100 μH
I_LM
T_C = 25 °C
P_D
Operating Junction and Storage Temperature Range
T_J, T_stg
Soldering Recommendations (Peak Temperature)
for 10 s
Notes
a. T_J = 25 °C to 150 °C
b. Repetitive rating; pulse width limited by maximum junction temperature.
c. 1.6 mm from case.
LIMIT
60
± 20
0.8
6.4
0.008
6.4
1.0
- 55 to + 150
300^c
UNIT
V
A
W/°C
A
W
°C
S11-2479-Rev. A, 19-Dec-11
1
Document Number: 91487
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000