SI9926CD Datasheet, PDF (1/10 Pages) Vishay Telefunken – Dual N-Channel 20-V (D-S) MOSFET

New Product
Dual N-Channel 20-V (D-S) MOSFET
Si9926CDY
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
0.018 at V_GS = 4.5 V
20
0.022 at V_GS = 2.5 V
I_D (A)^a
8
8
Q_g (Typ.)
10 nC
SO-8
S₁ 1
G₁ 2
S₂ 3
G_{2 4}
Top View
8 D1
7 ^D1
6 D2
5 ^D2
Ordering Information: Si9926CDY-T1-E3 (Lead (Pb)-free)
Si9926CDY-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET^® Power MOSFET
• 100 % UIS Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• DC/DC Converter
- Game Machine
- PC
D₁
D₂
G₁
S₁
N-Channel MOSFET
G₂
S₂
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150 °C)
Pulsed Drain Current
T_C = 25 °C
T_C = 70 °C
T_A = 25 °C
T_A = 70 °C
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
T_C = 25 °C
T_A = 25 °C
L = 0.1 mH
T_C = 25 °C
Maximum Power Dissipation
T_C = 70 °C
T_A = 25 °C
T_A = 70 °C
Operating Junction and Storage Temperature Range
V_DS
V_GS
I_D
I_DM
I_S
I_AS
E_AS
P_D
T_J, T_stg
Limit
20
± 12
8^a
8^a
8^{a, b, c}
6.7^{b, c}
30
2.6
1.7^{b, c}
5
1.25
3.1
2
2^{b, c}
1.3^{b, c}
- 55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^{a, c, d}
Maximum Junction-to-Foot (Drain)
t ≤ 10 s
Steady State
Notes:
a. Package limited, T_C = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 110 °C/W.
Symbol
R_thJA
R_thJF
Typical
50
32
Maximum
62.5
40
Unit
V
A
mJ
W
°C
Unit
°C/W
Document Number: 68606
S09-0704-Rev. B, 27-Apr-09
www.vishay.com
1