 English |
|
|
|
|
|
|
|
| SI4838BD Datasheet, PDF (1/10 Pages) Vishay Telefunken – N-Channel 12-V (D-S) MOSFET | |||
| |||
|
New Product
N-Channel 12-V (D-S) MOSFET
Si4838BDY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.0027 at VGS = 4.5 V
12
0.0032 at VGS = 2.5 V
0.0040 at VGS = 1.8 V
ID (A)a
34
31
28
Qg (Typ.)
33 nC
FEATURES
⢠Halogen-free
⢠TrenchFET® Power MOSFET
⢠100 % Rg Tested
⢠100 % UIS Tested
APPLICATIONS
⢠Low VIN DC/DC
S1
S2
S3
G4
SO-8
Top View
8D
7D
6D
5D
Ordering Information: Si4838BDY-T1-GE3 (Lead (Pb)-free and Halogen-free)
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
ID
Pulsed Drain Current
TA = 70 °C
IDM
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
IS
Single Pulse Avalanche Current
Avalanche Energy
L = 0.1 mH
IAS
EAS
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
PD
Operating Junction and Storage Temperature Range
TA = 70 °C
TJ, Tstg
Limit
12
±8
34
27
22.5b, c
18.0b, c
70
5.1
2.2b, c
20
20
5.7
3.6
2.50b, c
1.6b, c
- 55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb,d
Maximum Junction-to-Foot (Drain)
Notes:
a. Based on TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 85 °C/W.
t ⤠10 s
Steady State
Symbol
RthJA
RthJF
Typical
39
18
Maximum
50
22
Unit
V
A
mJ
W
°C
Unit
°C/W
Document Number: 68964
S-82662-Rev. A, 03-Nov-08
www.vishay.com
1
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese