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SI4670DY Datasheet, PDF (1/15 Pages) Vishay Siliconix – Dual N-Channel 25-V (D-S) MOSFET with Schottky Diode
Si4670DY
Vishay Siliconix
Dual N-Channel 25-V (D-S) MOSFET with Schottky Diode
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
Channel-1 25
0.023 at VGS = 10 V
0.028 at VGS = 4.5 V
Channel-2 25
0.023 at VGS = 10 V
0.028 at VGS = 4.5 V
ID (A)a, e
8.0
8.0
8.0
8.0
Qg (Typ.)
5.5
5.5
SCHOTTKY PRODUCT SUMMARY
VDS (V)
25
VSD (V)
Diode Forward Voltage
0.43 V at 1.0 A
IF (A)a
2.3
SO-8
S1/D2 1
G1 2
S2 3
G2 4
8 D1
7 D1
6 S1/D2
5 S1/D2
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• PWM Optimized
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Synchronous Buck Converter
• Game Machine
• Notebook
D1
D2
Schottky Diode
G1
G2
Top View
Ordering Information: Si4670DY-T1-E3 (Lead (Pb)-free)
Si4670DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
S1
N-Channel MOSFET
S2
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Channel-1
Channel-2
Drain-Source Voltage
VDS
25
25
Gate-Source Voltage
VGS
± 16
± 16
TC = 25 °C
8.0e
8.0e
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
ID
7
7b, c
7
7b, c
TA = 70 °C
5.6b, c
5.6b, c
Pulsed Drain Current (10 µs Pulse Width)
IDM
30
30
Source-Drain Current Diode Current
TC = 25 °C
TA = 25 °C
IS
2.3
1.5b, c
2.3
1.5b, c
TC = 25 °C
2.8
2.8
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
PD
1.8
1.8b, c
1.8
1.8b, c
TA = 70 °C
1.1b, c
1.1b, c
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Maximum Junction-to-Ambientb, d
t ≤ 10 s
RthJA
Maximum Junction-to-Foot (Drain)
Steady State
RthJF
Notes:
a. Based on TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 110 °C/W (Channel-1 and Channel-2).
e. Package limited.
Document Number: 69595
S09-2109-Rev. C, 12-Oct-09
Channel-1
Typ. Max.
57
70
36
44
Channel-2
Typ. Max.
57
70
36
44
Unit
°C/W
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