SI4628DY Datasheet, PDF (1/10 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET with Schottky Diode

Si4628DY
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET with Schottky Diode
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
30
0.0030 at V_GS = 10 V
0.0038 at V_GS = 4.5 V
I_D (A)^a
38
33
Q_g (Typ.)
27.5 nC
S1
S2
S3
G4
SO-8
8^D
7D
6D
5D
Top View
Ordering Information: Si4628DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• SkyFET^® Monolithic TrenchFET^® Gen III
Power MOSFET and Schottky Diode
• 100 % R_g and UIS Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Notebook CPU Core
• Buck Converter
D
G
N-Channel MOSFET
S
Schottky Diode
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
30
V
V_GS
± 20
T_C = 25 °C
38
Continuous Drain Current (T_J = 150 °C)
T_C = 70 °C
T_A = 25 °C
I_D
30
25.4^{b, c}
Pulsed Drain Current
T_A = 70 °C
20^{b, c}
A
I_DM
70
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
T_C = 25 °C
T_A = 25 °C
I_S
L = 0.1 mH
I_AS
E_AS
7
3.1^{b, c}
45
101
mJ
Maximum Power Dissipation
T_C = 25 °C
T_C = 70 °C
T_A = 25 °C
P_D
7.8
5
W
3.5^{b, c}
T_A = 70 °C
2.2^{b, c}
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^{b, d}
Maximum Junction-to-Foot (Drain)
Notes:
a. Based on T_C = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 80 °C/W.
t ≤ 10 s
Steady State
Symbol
R_thJA
R_thJF
Typ.
29
13
Max.
35
16
Unit
°C/W
Document Number: 64811
S09-0871-Rev. A, 18-May-09
www.vishay.com
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