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| SI4288DY Datasheet, PDF (1/10 Pages) Vishay Siliconix – Dual N-Channel 40 V (D-S) MOSFET | |||
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Dual N-Channel 40 V (D-S) MOSFET
Si4288DY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
40
RDS(on) (ï)
0.020 at VGS = 10 V
0.023 at VGS = 4.5 V
ID (A)a
9.2
8.6
Qg (Typ.)
4.9
S1 1
G1 2
S2 3
G2 4
SO-8
8 D1
7 D1
6 D2
5 D2
FEATURES
⢠Halogen-free According to IEC 61249-2-21
Definition
⢠TrenchFETïï Power MOSFET
⢠100 % Rg and UIS Tested
⢠Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
⢠CCFL Inverter
⢠DC/DC Converter
⢠HDD
D1
D2
G1
G2
Top View
Ordering Information: Si4288DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
S1
N-Channel MOSFET
S2
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
40
V
VGS
± 20
TC = 25 °C
9.2
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
ID
7.4
7.4b, c
TA = 70 °C
5.9b, c
Pulsed Drain Current (10 µs Pulse Width)
Source-Drain Current Diode Current
IDM
50
A
TC = 25 °C
TA = 25 °C
IS
2.6
1.6b, c
Pulsed Source-Drain Current
ISM
50
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
IAS
10
EAS
5
TC = 25 °C
3.1
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
PD
2
W
2b, c
TA = 70 °C
1.28b, c
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, d
Maximum Junction-to-Foot (Drain)
t ï£ 10 s
Steady-State
Notes:
a. Based on TC = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under steady state conditions is 120 °C/W.
Document Number: 67078
S10-2768-Rev. A, 29-Nov-10
Symbol
RthJA
RthJF
Typ.
49
30
Max.
62.5
40
Unit
°C/W
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