SI4204DY Datasheet, PDF (1/10 Pages) Vishay Siliconix – Dual N-Channel 20 V MOSFET

Dual N-Channel 20 V MOSFET
Si4204DY
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
20
R_DS(on) (Ω)
0.0046 at V_GS = 10 V
0.006 at V_GS = 4.5 V
I_D (A)
19.8^a
17.3^a
Q_g (Typ.)
14.5
S_{1 1}
G_{1 2}
S_{2 3}
G_{2 4}
SO-8
8 ^D1
7 ^D1
6 ^D2
5 ^D2
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET^® Power MOSFET
• 100 % R_g Tested
• 100 % UIS Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
D₁
D₂
• DC/DC Converter
• Fixed Telecom
• Notebook PC
G₁
G₂
Top View
Ordering Information: Si4204DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
S₁
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150 °C)
Pulsed Drain Current (10 µs Pulse Width)
Source-Drain Current Diode Current
Pulsed Source-Drain Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
T_C = 25 °C
T_C = 70 °C
T_A = 25 °C
T_A = 70 °C
T_C = 25 °C
T_A = 25 °C
L = 0.1 mH
T_C = 25 °C
T_C = 70 °C
T_A = 25 °C
T_A = 70 °C
V_DS
V_GS
I_D
I_DM
I_S
I_SM
I_AS
E_AS
P_D
T_J, T_stg
Limit
20
± 20
19.8
15.9
15.5^{b, c}
12.2^{b, c}
50
2.7
1.6^{b, c}
50
20
20
3.25
2.10
2.0^{b, c}
1.25^{b, c}
- 55 to 150
S₂
N-Channel MOSFET
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^{b, d}
Maximum Junction-to-Foot (Drain)
t ≤ 10 s
Steady-State
Notes:
a. Based on T_C = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under steady state conditions is 120 °C/W.
Document Number: 65154
S10-1042-Rev. A, 03-May-10
Symbol
R_thJA
R_thJF
Typ.
45
29
Max.
62.5
38
Unit
°C/W
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