SI4190ADY Datasheet, PDF (1/10 Pages) Vishay Siliconix – N-Channel 100 V (D-S) MOSFET

New Product
N-Channel 100 V (D-S) MOSFET
Si4190ADY
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
100
R_DS(on) () Max.
0.0088 at V_GS = 10 V
0.0094 at V_GS = 7.5 V
0.0120 at V_GS = 4.5 V
SO-8
I_D (A)^a
18.4
17.8
15.8
Q_g (Typ.)
20.7 nC
S1
S2
S3
G4
8^D
7D
6D
5D
Top View
Ordering Information:
Si4190ADY-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
• TrenchFET^® Power MOSFET
• 100 % R_g and UIS Tested
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• DC/DC Primary Side Switch
D
• Telecom/Server
• Industrial
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150 °C)
Pulsed Drain Current (t = 300 µs)
T_C = 25 °C
T_C = 70 °C
T_A = 25 °C
T_A = 70 °C
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Avalanche Energy
T_C = 25 °C
T_A = 25 °C
L = 0.1 mH
T_C = 25 °C
Maximum Power Dissipation
T_C = 70 °C
T_A = 25 °C
T_A = 70 °C
Operating Junction and Storage Temperature Range
V_DS
V_GS
I_D
I_DM
I_S
I_AS
E_AS
P_D
T_J, T_stg
100
± 20
18.4
14.6
13^{b, c}
10.3^{b, c}
70
5.4
2.7^{b, c}
30
45
6
3.8
3^{b, c}
1.9^{b, c}
- 55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^{b, d}
t  10 s
Maximum Junction-to-Foot (Drain)
Steady State
Notes:
a. Based on T_C = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under steady state conditions is 85 °C/W.
Symbol
R_thJA
R_thJF
Typical
33
16
Maximum
42
21
Unit
V
A
mJ
W
°C
Unit
°C/W
Document Number: 63826
For technical support, please contact: [e-mail]
www.vishay.com
S12-0541-Rev. A, 12-Mar-12
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000