SI4168DY Datasheet, PDF (1/10 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET

N-Channel 30-V (D-S) MOSFET
Si4168DY
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
0.0057 at V_GS = 10 V
30
0.0076 at V_GS = 4.5 V
I_D (A)^a
24
21
Q_g (Typ.)
13.8 nC
FEATURES
• Halogen-free
• TrenchFET^® Power MOSFET
• 100 % R_g Tested
• 100 % UIS Tested
APPLICATIONS
• Notebook DC/DC
S1
S2
S3
G4
SO-8
8D
7D
6D
5D
Top View
Ordering Information: Si4168DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150 °C)
Pulsed Drain Current
T_C = 25 °C
T_C = 70 °C
T_A = 25 °C
T_A = 70 °C
Avalanche Current
Avalanche Energy
L = 0.1 mH
Continuous Source-Drain Diode Current
T_C = 25 °C
T_A = 25 °C
T_C = 25 °C
Maximum Power Dissipation
T_C = 70 °C
T_A = 25 °C
T_A = 70 °C
Operating Junction and Storage Temperature Range
V_DS
V_GS
I_D
I_DM
I_AS
E_AS
I_S
P_D
T_J, T_stg
Limit
30
± 20
24
19.4
16^{b, c}
14^{b, c}
70
35
61
4.7
2.1^{b, c}
5.7
3.6
2.5^{b, c}
1.6^{b, c}
- 55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^{b, f}
Maximum Junction-to-Foot (Drain)
t ≤ 10 s
Steady State
Notes:
a. Based on T_C = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 85 °C/W.
Symbol
R_thJA
R_thJF
Typical
35
18
Maximum
50
22
Unit
V
A
mJ
A
W
°C
Unit
°C/W
Document Number: 69005
S-82668-Rev. A, 03-Nov-08
www.vishay.com
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