SI4134DY Datasheet, PDF (1/10 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET

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Si4134DY
Vishay Siliconix
N-Channel 30 V (D-S) MOSFET
PRODUCT SUMMARY
V_DS (V)
30
R_DS(on) (Ω) MAX.
0.0140 at V_GS = 10 V
0.0175 at V_GS = 4.5 V
I_D (A) ^a
14
12.5
Q_g (TYP.)
7.3 nC
SO-8 Single
D
D5
D6
D7
8
FEATURES
• TrenchFET^® power MOSFET
• 100 % R_g and UIS tested
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
Available
APPLICATIONS
• DC/DC conversion
D
- Notebook system power
4
3G
2S
1S
S
Top View
Ordering Information:
Si4134DY-T1-E3 (lead (Pb)-free)
Si4134DY-T1-GE3 (lead (Pb)-free and halogen-free)
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
V_DS
V_GS
T_C = 25 °C
Continuous Drain Current (T_J = 150 °C)
T_C = 70 °C
T_A = 25 °C
I_D
T_A = 70 °C
Pulsed Drain Current (t = 300 μs)
I_DM
Continuous Source-Drain Diode Current
T_C = 25 °C
T_A = 25 °C
I_S
Single Pulse Avalanche Current
Avalanche Energy
L = 0.1 mH
T_C = 25 °C
Maximum Power Dissipation
T_C = 70 °C
T_A = 25 °C
T_A = 70 °C
Operating Junction and Storage Temperature Range
I_AS
E_AS
P_D
T_J, T_stg
LIMIT
30
± 20
14
11.2
9.9 ^{b, c}
7.9 ^{b, c}
50
4.1
2 ^{b, c}
15
11.25
5
3.2
2.5 ^{b, c}
1.6 ^{b, c}
-55 to +150
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient ^{b, d}
t ≤ 10 s
Maximum Junction-to-Foot (Drain)
Steady State
Notes
a. Based on T_C = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under steady state conditions is 85 °C/W.
SYMBOL
R_thJA
R_thJF
TYPICAL
38
20
MAXIMUM
50
25
UNIT
°C/W
S15-2154-Rev. D, 07-Sep-15
1
Document Number: 68999
For technical questions, contact: [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000