SI4102DY Datasheet, PDF (1/10 Pages) Vishay Siliconix – N-Channel 100-V (D-S) MOSFET

N-Channel 100 V (D-S) MOSFET
Si4102DY
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
R_DS(on) ()
0.158 at V_GS = 10 V
100
0.175 at V_GS = 6 V
I_D (A)^d
3.8
3.6
Q_g (Typ.)
4.6 nC
FEATURES
• TrenchFET^® Power MOSFET
• 100 % UIS Tested
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• High Frequency Boost Converter
• LED Backlight for LCD TV
SO-8
S1
S2
S3
G4
8D
7D
6D
5D
Top View
Ordering Information: Si4102DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
T_C = 25 °C
Continuous Drain Current (T_J = 150 °C)
T_C = 70 °C
T_A = 25 °C
I_D
T_A = 70 °C
Pulsed Drain Current
I_DM
Continuous Source-Drain Diode Current
T_C = 25 °C
T_A = 25 °C
I_S
Single Avalanche Current
Single Avalanche Energy
L = 0.1 mH
I_AS
E_AS
T_C = 25 °C
Maximum Power Dissipation
T_C = 70 °C
T_A = 25 °C
P_D
T_A = 70 °C
Operating Junction and Storage Temperature Range
T_J, T_stg
Limit
100
± 20
3.8
3
2.7^{a, b}
2.1^{a, b}
8
4
2^{a, b}
6
1.8
4.8
3
2.4^{a, b}
1.5^{a, b}
- 55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^{a, c}
Maximum Junction-to-Foot (Drain)
t  10 s
Steady State
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. Maximum under steady state conditions is 85 °C/W.
d. Based on T_C = 25 °C.
Symbol
R_thJA
R_thJF
Typical
42
21
Maximum
53
26
Unit
V
A
A
mJ
W
°C
Unit
°C/W
Document Number: 69252
For technical questions, contact: [e-mail]
www.vishay.com
S13-0631-Rev. C, 25-Mar-13
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000