SI4100DY Datasheet, PDF (1/10 Pages) Vishay Siliconix – N-Channel 100-V (D-S) MOSFET

N-Channel 100-V (D-S) MOSFET
Si4100DY
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
0.063 at V_GS = 10 V
100
0.084 at V_GS = 6 V
I_D (A)^d
6.8
5.8
Q_g (Typ.)
9 nC
SO-8
S1
S2
S3
G4
8D
7D
6D
5D
Top View
FEATURES
• Halogen-free According to IEC 61249-2-21
Available
• TrenchFET^® Power MOSFET
• 100 % UIS Tested
APPLICATIONS
• High Frequency Boost Converter
• LED Backlight for LCD TV
D
G
Ordering Information: Si4100DY-T1-E3 (Lead (Pb)-free)
Si4100DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150 °C)
Pulsed Drain Current
T_C = 25 °C
T_C = 70 °C
T_A = 25 °C
T_A = 70 °C
Continuous Source-Drain Diode Current
Single Avalanche Current
Single Avalanche Energy
T_C = 25 °C
T_A = 25 °C
L = 0.1 mH
T_C = 25 °C
Maximum Power Dissipation
T_C = 70 °C
T_A = 25 °C
T_A = 70 °C
Operating Junction and Storage Temperature Range
V_DS
V_GS
I_D
I_DM
I_S
I_AS
E_AS
P_D
T_J, T_stg
Limit
100
± 20
6.8
5.4
4.4^{a, b}
3.5^{a, b}
20
5
2.1^{a, b}
19
18
6
3.8
2.5^{a, b}
1.6^{a, b}
- 55 to 150
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^{b, c}
t ≤ 10 s
Maximum Junction-to-Foot (Drain)
Steady State
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. Maximum under Steady State conditions is 85 °C/W.
d. T_C = 25 °C.
Symbol
R_thJA
R_thJF
Document Number: 69251
S09-0220-Rev. B, 09-Feb-09
Typical
37
17
Maximum
50
21
Unit
°C/W
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