SI4010DY Datasheet, PDF (1/10 Pages) Vishay Siliconix – N-Channel 30 V (D-S) MOSFET

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Si4010DY
Vishay Siliconix
N-Channel 30 V (D-S) MOSFET
PRODUCT SUMMARY
V_DS (V)
30
R_DS(on) () (Max.)
0.0034 at V_GS = 10 V
0.0044 at V_GS = 4.5 V
I_D (A)^a
31.3
27.5
Q_g (Typ.)
22.5 nC
S1
S2
S3
G4
SO-8
8D
7D
6D
5D
FEATURES
• TrenchFET^® Power MOSFET
• 100 % R_g and UIS Tested
• Material categorization: 
For definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• Synchronous Rectification
• DC/DC Conversion
• Telecom/Server
• Industrial
D
G
Top View
Ordering Information:
Si4010DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150 °C)
Pulsed Drain Current (t = 300 μs)
T_C = 25 °C
T_C = 70 °C
T_A = 25 °C
T_A = 70 °C
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
T_C = 25 °C
T_A = 25 °C
L = 0.1 mH
T_C = 25 °C
Maximum Power Dissipation
T_C = 70 °C
T_A = 25 °C
T_A = 70 °C
Operating Junction and Storage Temperature Range
V_DS
V_GS
I_D
I_DM
I_S
I_AS
E_AS
P_D
T_J, T_stg
Limit
30
+ 20, - 16
31.3
24.9
20.2^{b, c}
16.1^{b, c}
100
5.4
2.2^{b, c}
20
20
6
3.8
2.5^{b, c}
1.6^{b, c}
- 55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^{b, d}
t  10 s
Maximum Junction-to-Foot (Drain)
Steady State
Notes
a. Based on T_C = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under steady state conditions is 85 °C/W.
Symbol
R_thJA
R_thJF
Typical
37
17
Maximum
50
21
Unit
V
A
mJ
W
°C
Unit
°C/W
S13-2179-Rev. A, 14-Oct-13
1
Document Number: 62915
For technical questions, contact: [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000