SI3552DV Datasheet, PDF (1/12 Pages) Vishay Siliconix – N- and P-Channel 30-V (D-S) MOSFET

Si3552DV
Vishay Siliconix
N- and P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
N-Channel
30
0.105 at V_GS = 10 V
0.175 at V_GS = 4.5 V
P-Channel
- 30
0.200 at V_GS = - 10 V
0.360 at V_GS = - 4.5 V
I_D (A)
2.5
2.0
- 1.8
- 1.2
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET^® Power MOSFET
• 100 % R_g Tested
• Compliant to RoHS Directive 2002/95/EC
TSOP-6
Top View
G1
1
6
D1
3 mm S2
2
5
S1
G2
3
4
D2
D₁
S₂
G₂
G₁
2.85 mm
Ordering Information: Si3552DV -T1-E3 (Lead (Pb)-free)
Si3552DV-T1-GE3 (Lead (Pb)-free and Halogen-free)
S₁
N-Channel MOSFET
D₂
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
N-Channel
P-Channel
Drain-Source Voltage
V_DS
30
- 30
Gate-Source Voltage
V_GS
± 20
± 20
Continuous Drain Current (T_J = 150 °C)^{a, b}
T_A = 25 °C
T_A = 70 °C
I_D
2.5
- 1.8
2.0
- 1.2
Pulsed Drain Current
I_DM
8
-7
Continuous Source Current (Diode Conduction)^{a, b}
I_S
1.05
- 1.05
Maximum Power Dissipation^{a, b}
T_A = 25 °C
T_A = 70 °C
P_D
1.15
0.73
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
t≤5s
Steady State
Maximum Junction-to-Lead
Steady State
Notes:
a. Surface Mounted on FR4 board.
b. t ≤ 5 s.
Symbol
R_thJA
R_thJL
Typical
93
130
75
Maximum
110
150
90
Unit
V
A
W
°C
Unit
°C/W
Document Number: 70971
S09-2110-Rev. C, 12-Oct-09
www.vishay.com
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