SI3464DV Datasheet, PDF (1/11 Pages) Vishay Siliconix – N-Channel 20-V (D-S) MOSFET

New Product
N-Channel 20-V (D-S) MOSFET
Si3464DV
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
0.024 at V_GS = 4.5 V
20
0.028 at V_GS = 2.5 V
0.030 at V_GS = 1.8 V
I_D (A)^e
8^a
8^a
7.1
Q_g (Typ.)
11 nC
TSOP-6
Top View
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET^® Power MOSFET
• 100 % R_g Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• DC/DC Converters
• Load Switch for Portable Applications
D
1
6
D
3 mm D
2
G
3
5
D
4
S
2.85 mm
Marking Code
AZ XXX
Lot Traceability
and Date Code
Part # Code
Ordering Information: Si3464DV-T1-GE3 (Lead (Pb)-free and Halogen-free)
D
(1, 2, 5, 6)
G
(3)
(4)
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
20
V
V_GS
±8
T_C = 25 °C
8^a
Continuous Drain Current (T_J = 150 °C)
T_C = 70 °C
T_A = 25 °C
I_D
8^a
7.5^{b, c}
T_A = 70 °C
6.0^{b, c}
A
Pulsed Drain Current
I_DM
20
Continuous Source-Drain Diode Current
T_C = 25 °C
T_A = 25 °C
I_S
3
1.7^{b, c}
T_C = 25 °C
3.6
Maximum Power Dissipation
T_C = 70 °C
T_A = 25 °C
P_D
2.3
2^{b, c}
W
T_A = 70 °C
1.3^{b, c}
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 150
°C
Soldering Recommendations (Peak Temperature)
260
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^{b, d}
t≤5s
Maximum Junction-to-Foot (Drain)
Steady State
Notes:
a. Package limited
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under steady state conditions is 110 °C/W.
e. Based on T_C = 25 °C.
Symbol
R_thJA
R_thJF
Document Number: 65712
S10-0218-Rev. A, 25-Jan-10
Typical
50
28
Maximum
62.5
35
Unit
°C/W
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