SI3442CDV Datasheet, PDF (1/11 Pages) Vishay Telefunken – N-Channel 20 V (D-S) MOSFET

N-Channel 20 V (D-S) MOSFET
Si3442CDV
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
20
R_DS(on) () Max.
0.027 at V_GS = 10 V
0.030 at V_GS = 4.5 V
0.049 at V_GS = 2.5 V
TSOP-6
Top View
D
1
6
I_D (A)^a
8^d
7.5
6.1
Q_g (Typ.)
4.3 nC
D
FEATURES
• TrenchFET^® Power MOSFET
• 100 % R_g and UIS Tested
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• DC/DC Converters
• Boost Converters
• Load Switch
D
(1, 2, 5, 6)
3 mm D
2
5
D
G
3
4
S
2.85 mm
Ordering Information:
Si3442CDV-T1-GE3 (Lead (Pb)-free and Halogen-free)
Marking Code
BE XXX
Lot Traceability
and Date Code
Part # Code
G
(3)
(4)
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
20
V
V_GS
± 12
T_C = 25 °C
8^d
Continuous Drain Current (T_J = 150 °C)
T_C = 70 °C
T_A = 25 °C
I_D
6.6
6.5^{a, b}
T_A = 70 °C
5.2^{a, b}
A
Pulsed Drain Current (t = 300 µs)
I_DM
20
Continuous Source-Drain Diode Current
T_C = 25 °C
T_A = 25 °C
I_S
2.2
1.4^{a, b}
Avalanche Current
L = 0.1 mH
I_AS
8
Single Avalanche Energy
E_AS
3.2
mJ
T_C = 25 °C
2.7
Maximum Power Dissipation
T_C = 70 °C
T_A = 25 °C
P_D
1.7
1.7^{a, b}
W
T_A = 70 °C
1.1^{a, b}
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^{a, c}
t5s
Maximum Junction-to-Foot (Drain)
Steady State
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. t = 5 s.
c. Maximum under steady state conditions is 120 °C/W.
d. Package limited
Symbol
R_thJA
R_thJF
Typical
61
38
Maximum
74
46
Unit
°C/W
Document Number: 62654
For technical questions, contact: [e-mail]
www.vishay.com
S12-0976-Rev. A, 30-Apr-12
1
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000