SI3410DV Datasheet, PDF (1/11 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET

N-Channel 30-V (D-S) MOSFET
Si3410DV
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
30
0.0195 at V_GS = 10 V
0.023 at V_GS = 4.5 V
I_D (A)^a
8
8
Q_g (Typ.)
9.2 nC
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET^® Power MOSFET
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Notebook Load Switch
• Low Current dc-to-dc
TSOP-6
Top View
D
1
6
D
3 mm _D
2
G
3
5
D
4
S
2.85 mm
Marking Code
AM XXX
Lot Traceability
and Date Code
Part # Code
Ordering Information: Si3410DV-T1-E3 (Lead (Pb)-free)
Si3410DV-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
T_C = 25 °C
Continuous Drain Current (T_J = 150 °C)
T_C = 70 °C
T_A = 25 °C
I_D
Pulsed Drain Current
T_A = 70 °C
I_DM
Continuous Source-Drain Diode Current
T_C = 25 °C
T_A = 25 °C
I_S
T_C = 25 °C
Maximum Power Dissipation
T_C = 70 °C
T_A = 25 °C
P_D
Operating Junction and Storage Temperature Range
T_A = 70 °C
T_J, T_stg
D
(1, 2, 5, 6)
G
(3)
(4)
S
N-Channel MOSFET
Limit
30
± 20
8^a
8^a
7.5^b,c
5.9^b,c
30
2.7
1.7^b,c
4.1
2.6
2^b,c
1.25^b,c
- 55 to 150
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^{b, d}
Maximum Junction-to-Foot
t≤5s
Steady State
Notes:
a. Package Limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under Steady State conditions is 110 °C/W.
Document Number: 69254
S09-2110-Rev. B, 12-Oct-09
Symbol
R_thJA
R_thJF
Typical
45
25
Maximum
62.5
30
Unit
°C/W
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