SI2392ADS Datasheet, PDF (1/10 Pages) Vishay Telefunken – N-Channel 100 V (D-S) MOSFET

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Si2392ADS
Vishay Siliconix
N-Channel 100 V (D-S) MOSFET
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω) MAX.
0.126 at V_GS = 10 V
100
0.144 at V_GS = 6 V
0.189 at V_GS = 4.5 V
SOT-23 (TO-236)
I_D (A) ^a
3.1
2.9
2.6
Q_g (TYP.)
2.9 nC
D
3
2
S
1
G
Top View
Marking Code: G2
Ordering Information:
Si2392ADS-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
• TrenchFET^® power MOSFET
• 100 % R_g and UIS tested
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
D
• DC/DC converters / boost converters
• Load switch
• LED backlighting in LCD TVs
• Power management for mobile
G
computing
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150 °C)
Pulsed Drain Current (t = 300 μs)
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
T_C = 25 °C
T_C = 70 °C
T_A = 25 °C
T_A = 70 °C
T_C = 25 °C
T_A = 25 °C
L = 0.1 mH
T_C = 25 °C
T_C = 70 °C
T_A = 25 °C
T_A = 70 °C
V_DS
V_GS
I_D
I_DM
I_S
I_AS
E_AS
P_D
T_J, T_stg
LIMIT
100
± 20
3.1
2.5
2.2 ^{b, c}
1.8 ^{b, c}
8
2.1
1 ^{b, c}
3
0.45
2.5
1.6
1.25 ^{b, c}
0.8 ^{b, c}
-55 to 150
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient ^{b, d}
t≤5s
Maximum Junction-to-Foot (Drain)
Steady State
Notes
a. Based on T_C = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under steady state conditions is 166 °C/W.
SYMBOL
R_thJA
R_thJF
TYPICAL
75
40
MAXIMUM
100
50
UNIT
°C/W
S14-0909-Rev. A, 28-Apr-14
1
Document Number: 62960
For technical questions, contact: [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000