SI2372DS Datasheet, PDF (1/10 Pages) Vishay Telefunken – N-Channel 30 V (D-S) MOSFET

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Si2372DS
Vishay Siliconix
N-Channel 30 V (D-S) MOSFET
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω) MAX.
0.033 at V_GS = 10 V
30
0.038 at V_GS = 6 V
0.043 at V_GS = 4.5 V
SOT-23 (TO-236)
I_D (A) ^d
5.3
4.9
4.6
Q_g (TYP.)
2.9 nC
D
3
FEATURES
• TrenchFET^® power MOSFET
• 100 % R_g tested
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• DC/DC converter
D
• Load switch
• Power management
2
S
1
G
Top View
Marking Code: F4
Ordering Information:
Si2372DS-T1-GE3 (Lead (Pb)-free and Halogen-free)
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
T_C = 25 °C
Continuous Drain Current (T_J = 150 °C)
T_C = 70 °C
T_A = 25 °C
T_A = 70 °C
Pulsed Drain Current (t = 100 μs)
Continuous Source-Drain Diode Current
T_C = 25 °C
T_A = 25 °C
T_C = 25 °C
Maximum Power Dissipation
T_C = 70 °C
T_A = 25 °C
T_A = 70 °C
Operating Junction and Storage Temperature Range
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_stg
LIMIT
30
± 20
5.3
4.2
4 ^{a, b}
3.2 ^{a, b}
25
1.4
0.8 ^{a, b}
1.7
1.1
0.96 ^{a, b}
0.62 ^{a, b}
-55 to 150
UNIT
V
A
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient ^{a, c}
Maximum Junction-to-Foot (Drain)
t≤5s
Steady State
Notes
a. Surface mounted on 1" x 1" FR4 board.
b. t = 5 s.
c. Maximum under steady state conditions is 175 °C/W.
d. T_C = 25 °C
SYMBOL
R_thJA
R_thJF
TYPICAL
100
60
MAXIMUM
130
75
UNIT
°C/W
S14-0769-Rev. A, 14-Apr-14
1
Document Number: 63244
For technical questions, contact: [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000