SI2366DS Datasheet, PDF (1/10 Pages) Vishay Siliconix – N-Channel 30 V (D-S) MOSFET

New Product
N-Channel 30 V (D-S) MOSFET
Si2366DS
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
0.036 at V_GS = 10 V
30
0.042 at V_GS = 4.5 V
I_D (A)^a
5.8
5.4
Q_g (Typ.)
3.2 nC
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET^® Power MOSFET
• 100 % R_g Tested
• Compliant to RoHS Directive 2002/95/EC
SOT-23
APPLICATIONS
• DC/DC Converters, High Frequency Switching
• Load Switch
• Portable and Consumer Applications
G1
S2
3D
Top View
Marking Code
H6 XXX
Lot Traceability
and Date Code
Part # Code
Ordering Information: Si2366DS-T1-GE3 (Lead (Pb)-free and Halogen-free)
D
(3)
G
(1)
(2)
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
30
V
V_GS
± 20
T_C = 25 °C
5.8^a
Continuous Drain Current (T_J = 150 °C)
T_C = 70 °C
T_A = 25 °C
I_D
4.7
4.5^{b, c}
T_A = 70 °C
3.6^{b, c}
A
Pulsed Drain Current (t = 300 µs)
I_DM
20
Continuous Source-Drain Diode Current
T_C = 25 °C
T_A = 25 °C
I_S
1.75
1.04^{b, c}
T_C = 25 °C
2.1
Maximum Power Dissipation
T_C = 70 °C
T_A = 25 °C
P_D
1.3
1.25^{b, c}
W
T_A = 70 °C
0.8^{b, c}
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 150
°C
Soldering Recommendations (Peak Temperature)
260
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^{b, d}
t≤5s
Maximum Junction-to-Foot (Drain)
Steady State
Notes:
a. Based on T_C = 25 °C
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under steady state conditions is 125 °C/W.
Symbol
R_thJA
R_thJF
Typical
80
40
Maximum
100
60
Unit
°C/W
Document Number: 67509
www.vishay.com
S11-0612-Rev. A, 04-Apr-11
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000