SI2356DS Datasheet, PDF (1/10 Pages) Vishay Telefunken – N-Channel 40 V (D-S) MOSFET

N-Channel 40 V (D-S) MOSFET
Si2356DS
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
R_DS(on) () Max.
0.051 at V_GS = 10 V
40
0.054 at V_GS = 4.5 V
0.070 at V_GS = 2.5 V
TO-236
(SOT-23)
I_D (A)^a
4.3
4.1
3.6
Q_g (Typ.)
3.8 nC
G1
S2
3D
FEATURES
• TrenchFET^® Power MOSFET
• 100 % R_g Tested
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• DC/DC Converter
• Load Switch
• LED Backlighting
• Power Management
D
G
Top View
Si2356DS (E9)*
* Marking Code
Ordering Information:
Si2356DS-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS (T_A = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Drain-Source Voltage
V_DS
40
Gate-Source Voltage
V_GS
± 12
T_C = 25 °C
4.3
Continuous Drain Current (T_J = 150 °C)
T_C = 70 °C
I_D
T_A = 25 °C
3.4
3.2 ^a,b
T_A = 70 °C
2.6 ^a,b
Pulsed Drain Current (t = 100 µs)
I_DM
20
Continuous Source-Drain Diode Current
T_C = 25 °C
I_S
T_A = 25 °C
1.4
0.8 ^a,b
T_C = 25 °C
1.7
Maximum Power Dissipation
T_C = 70 °C
P_D
T_A = 25 °C
1.1
0.96 ^a,b
T_A = 70 °C
0.62 ^a,b
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 150
S
N-Channel MOSFET
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient ^a,c
t5s
Maximum Junction-to-Foot (Drain)
Steady State
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. t = 5 s.
c. Maximum under steady state conditions is 175 °C/W.
Symbol
R_thJA
R_thJF
Typical
100
60
Maximum
130
75
Unit
°C/W
Document Number: 62893
For technical questions, contact: [e-mail]
www.vishay.com
S13-1814-Rev. A, 12-Aug-13
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000