SI2342DS Datasheet, PDF (1/10 Pages) Vishay Siliconix – N-Channel 8 V (D-S) MOSFET

New Product
N-Channel 8 V (D-S) MOSFET
Si2342DS
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
8
R_DS(on) ()
0.017 at V_GS = 4.5 V
0.020 at V_GS = 2.5 V
0.022 at V_GS = 1.8 V
0.030 at V_GS = 1.5 V
0.075 at V_GS = 1.2 V
SOT-23
I_D (A)^{a, e}
6
6
6
6
6
Q_g (Typ.)
6 nC
G1
3D
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET^® Power MOSFET
• Low On-Resistance
• 100 % R_g Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Load Switches for Low Voltage Gate Drive
• Low Voltage Operating Circuits
- Gate Drive 1.2 V to 5 V
D
(3)
S2
Top View
Marking Code
F2 XXX
Lot Traceability
and Date Code
Part # Code
Ordering Information: Si2342DS-T1-GE3 (Lead (Pb)-free and Halogen-free)
G
(1)
(2)
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
8
V
V_GS
±5
T_C = 25 °C
Continuous Drain Current (T_J = 150 °C)
T_C = 70 °C
T_A = 25 °C
I_D
6^e
6^e
6^{e, b, c}
T_A = 70 °C
5.8^{b, c}
A
Pulsed Drain Current (t = 300 µs)
I_DM
30
Continuous Source-Drain Diode Current
T_C = 25 °C
T_A = 25 °C
I_S
2.1
1.1^{b, c}
T_C = 25 °C
2.5
Maximum Power Dissipation
T_C = 70 °C
T_A = 25 °C
P_D
1.6
1.3^{b, c}
W
T_A = 70 °C
0.8^{b, c}
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 150
°C
Soldering Recommendations (Peak Temperature)
260
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^{b, d}
t5s
Maximum Junction-to-Foot (Drain)
Steady State
Notes:
a. Based on T_C = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under steady state conditions is 166 °C/W.
e. Package limited.
Symbol
R_thJA
R_thJF
Typical
75
40
Maximum
100
50
Unit
°C/W
Document Number: 63302
www.vishay.com
S11-1388-Rev. A, 11-Jul-11
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000