SI1926DL Datasheet, PDF (1/11 Pages) Vishay Siliconix – Dual N-Channel 60-V (D-S) MOSFET

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Si1926DL
Vishay Siliconix
Dual N-Channel 60 V (D-S) MOSFET
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω) MAX.
1.4 at V_GS = 10 V
60
3 at V_GS = 4.5 V
I_D (A)
0.37
0.25
Q_g (nC) TYP.
0.47
SOT-363
SC-70 Dual (6 leads)
S₂
G₂
4
D₁
5
6
3
2
D₂
1
G₁
S₁
Top View
Marking Code: PD
Ordering Information:
Si1926DL-T1-E3 (Lead (Pb)-free)
Si1926DL-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
• TrenchFET^® power MOSFET
• 100 % R_g tested
• ESD protected: 1800 V
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• Low power load switch
Available
D₁
D₂
G₁
G₂
S₁
N-Channel MOSFET
S₂
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
V_DS
Gate-Source Voltage
Continuous Drain Current (T_J = 150 °C)
Pulsed Drain Current
V_GS
T_C = 25 °C
T_C = 70 °C
T_A = 25 °C
I_D
T_A = 70 °C
I_DM
Continuous Source-Drain Diode Current
T_C = 25 °C
T_A = 25 °C
I_S
T_C = 25 °C
Maximum Power Dissipation
T_C = 70 °C
T_A = 25 °C
P_D
T_A = 70 °C
Operating Junction and Storage Temperature Range
T_J, T_stg
LIMIT
60
± 20
0.37
0.30
0.34 ^{b, c}
0.27 ^{b, c}
0.65
0.43
0.25 ^{b, c}
0.51
0.33
0.30 ^{b, c}
0.20 ^{b, c}
-55 to +150
UNIT
V
A
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient ^{b, d}
Maximum Junction-to-Foot (Drain)
t≤5s
Steady State
Notes
a. Based on T_C = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under steady state conditions is 400 °C/W.
SYMBOL
R_thJA
R_thJF
TYPICAL
360
300
MAXIMUM
415
350
UNIT
°C/W
S14-1565-Rev. F, 04-Aug-14
1
Document Number: 73684
For technical questions, contact: [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000