SI1900DL Datasheet, PDF (1/9 Pages) Vishay Siliconix – Dual N-Channel 30-V (D-S) MOSFET

Dual N-Channel 30 V (D-S) MOSFET
Si1900DL
Vishay Siliconix
#
PRODUCT SUMMARY
V_DS (V)
30
R_DS(on) (Ω)
0.480 at V_GS = 10 V
0.700 at V_GS = 4.5 V
I_D (A)
0.63
0.52
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET^® Power MOSFET
• Compliant to RoHS Directive 2002/95/EC
SOT-363
SC-70 (6-LEADS)
S₁ 1
6 D₁
G₁ 2
5 _G2
D₂ 3
4 S₂
Marking Code
PB XX
Lot Traceability
and Date Code
Part # Code
Top View
Ordering Information: Si1900DL-T1-E3 (Lead (Pb)-free)
Si1900DL-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
5s
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
30
V
V_GS
± 20
Continuous Drain Current (T_J = 150 °C)^a
T_A = 25 °C
T_A = 85 °C
I_D
0.63
0.45
0.59
0.43
A
Pulsed Drain Current
I_DM
1.0
Continuous Source-Current (Diode Conduction)^a
I_S
0.25
0.23
Maximum Power Dissipation^a
T_A = 25 °C
T_A = 85 °C
P_D
0.30
0.16
0.27
W
0.14
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
t≤5s
Steady State
Maximum Junction-to-Foot (Drain)
Steady State
Notes:
a. Surface mounted on 1" x 1" FR4 board.
Symbol
R_thJA
R_thJF
Typical
360
400
300
Maximum
415
460
350
Unit
°C/W
Document Number: 71251
S10-1054-Rev. F, 03-May-10
www.vishay.com
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