SI1414DH Datasheet, PDF (1/12 Pages) Vishay Siliconix – N-Channel 30 V (D-S) MOSFET

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Si1414DH
Vishay Siliconix
N-Channel 30 V (D-S) MOSFET
PRODUCT SUMMARY
V_DS (V)
30
R_DS(on) (Ω)
0.046 at V_GS = 4.5 V
0.050 at V_GS = 2.5 V
0.057 at V_GS = 1.8 V
I_D (A) ^a
4
4
4
Q_g (TYP.)
5.7 nC
SOT-363
SC-70 Single (6 leads)
S
4
D
5
D
6
3
G
2
D
1
D
Top View
Marking Code: AP
Ordering Information:
Si1414DH-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
• TrenchFET^® power MOSFET
• 100 % R_g tested
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• DC/DC converters
D
• Boost converters
• Load switches
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150 °C)
Pulsed Drain Current
T_F = 25 °C
T_F = 70 °C
T_A = 25 °C
T_A = 70 °C
Continuous Source-Drain Diode Current
T_F = 25 °C
T_A = 25 °C
T_F = 25 °C
Maximum Power Dissipation
T_F = 70 °C
T_A = 25 °C
T_A = 70 °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature) ^{d, e}
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_stg
LIMIT
30
±8
4^a
4^a
4 ^{a, b, c}
3.7 ^{a, b, c}
20
2.3
1.3 ^{b, c}
2.8
1.8
1.56 ^{b, c}
1 ^{b, c}
-55 to 150
260
UNIT
V
A
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient ^{b, d}
t≤5s
Maximum Junction-to-Foot (Drain)
Steady State
Notes
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under steady state conditions is 125 °C/W.
SYMBOL
R_thJA
R_thJF
TYPICAL
60
34
MAXIMUM
80
45
UNIT
°C/W
S14-1224-Rev. C, 16-Jun-14
1
Document Number: 67073
For technical questions, contact: [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000