SI1062X Datasheet, PDF (1/8 Pages) Vishay Telefunken – N-Channel 20 V (D-S) MOSFET

New Product
N-Channel 20 V (D-S) MOSFET
Si1062X
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
R_DS(on) () Max.
0.420 at V_GS = 4.5 V
0.492 at V_GS = 2.5 V
20
0.597 at V_GS = 1.8 V
0.762 at V_GS = 1.5 V
I_D (A)
0.5
0.2
0.2
0.05
Q_g (Typ.)
1 nC
SC-89 (3-LEADS)
FEATURES
• TrenchFET^® Power MOSFET
• Gate-Source ESD Protected: 1000 V
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• Load/Power Switching for Portable Devices
• Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
Memories
• Battery Operated Systems
• Power Supply Converter Circuits
G1
3D
S2
Top View
Marking Code
J XX
Lot Traceability
and Date Code
Part # Code
Ordering Information: Si1062X-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS (T_A = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
20
V
V_GS
±8
Continuous Drain Current (T_J = 150 °C)^a
T_A = 25 °C
I_D
T_A = 70 °C
0.53^{a, b}
0.43^{a, b}
A
Pulsed Drain Current (t = 300 µs)
I_DM
2
Continuous Source-Drain Diode Current
T_A = 25 °C
I_S
0.18^{a, b}
A
Maximum Power Dissipation^a
T_A = 25 °C
0.22^{a, b}
T_A = 70 °C
P_D
0.14^{a, b}
W
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^b
t 5 s
Steady State
Symbol
R_thJA
Typ.
440
540
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. t = 5 s.
Max.
530
650
Unit
°C/W
Document Number: 62661
For technical questions, contact: [e-mail]
www.vishay.com
S12-2732-Rev. B, 12-Nov-12
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000