SI1050X Datasheet, PDF (1/8 Pages) Vishay Siliconix – N-Channel 8-V (D-S) MOSFET

N-Channel 8 V (D-S) MOSFET
Si1050X
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
R_DS(on) ()
0.086 at V_GS = 4.5 V
0.093 at V_GS = 2.5 V
8
0.102 at V_GS = 1.8 V
0.120 at V_GS = 1.5 V
I_D (A)
1.34^a
1.29
1.23
0.7
Q_g (Typ.)
7.1
SC-89 (6-LEADS)
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET^® Power MOSFET
• 100 % R_g Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Load Switch for Portable Devices
D1
D2
G3
6D
5D
4S
Marking Code
Q XX
Lot Traceability
and Date Code
Part # Code
Top View
Ordering Information: Si1050X-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS (T_A = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
8
V_GS
±5
V
Continuous Drain Current (T_J = 150 °C)^a
Pulsed Drain Current
T_A = 25 °C
T_A = 70 °C
I_D
I_DM
1.34^{b, c}
1.07^{b, c}
6
A
Continuous Source-Drain Diode Current
T_A = 25 °C
I_S
0.2^{b, c}
Maximum Power Dissipation^a
T_A = 25 °C
T_A = 70 °C
P_D
0.236^{b, c}
0.151^{b, c}
W
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^{b, d}
t 5 s
Steady State
Notes:
a. Based on T_C = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under steady state conditions is 650 °C/W.
Symbol
R_thJA
Typical
440
540
Maximum
530
650
Unit
°C/W
Document Number: 73896
S10-2544-Rev. D, 08-Nov-10
www.vishay.com
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