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| SI1034CX Datasheet, PDF (1/8 Pages) Vishay Siliconix – Dual N-Channel 20 V (D-S) MOSFET | |||
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Dual N-Channel 20 V (D-S) MOSFET
Si1034CX
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (ï)
0.396 at VGS = 4.5 V
0.456 at VGS = 2.5 V
20
0.546 at VGS = 1.8 V
0.760 at VGS = 1.5 V
ID (A)
0.5
0.2
0.2
0.05
Qg (Typ.)
0.75
FEATURES
⢠TrenchFET® Power MOSFET
⢠100 % Rg Tested
⢠Gate-Source ESD Protected: 1000 V
⢠Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
⢠Load/Power Switching for Portable Devices
⢠Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
Memories
⢠Battery Operated Systems
⢠Power Supply Converter Circuits
S1 1
G1 2
D2 3
SC-89
6 D1
5 G2
4 S2
Marking Code
4 XX
Lot Traceability
and Date Code
Part # Code
Top View
Ordering Information: Si1034CX-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C
TA = 70 °C
ID
Pulsed Drain Current
IDM
Continuous Source-Drain Diode Current
TA = 25 °C
IS
Maximum Power Dissipationa
TA = 25 °C
TA = 70 °C
PD
Operating Junction and Storage Temperature Range
TJ, Tstg
Limit
20
±8
0.61a, b
0.49a, b
2
0.18a, b
0.22a, b
0.14a, b
- 55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb
t ï£ï 5 s
Steady State
Symbol
RthJA
Typ.
470
560
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. t = 5 s.
Max.
565
675
Unit
V
A
A
W
°C
Unit
°C/W
Document Number: 67468
For technical support, please contact: pmostechsupport@vishay.com
www.vishay.com
S13-1614-Rev. C, 29-Jul-13
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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