SI1012CR Datasheet, PDF (1/9 Pages) Vishay Siliconix – N-Channel 20 V (D-S) MOSFET

N-Channel 20 V (D-S) MOSFET
Si1012CR
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
R_DS(on) ()
0.396 at V_GS = 4.5 V
0.456 at V_GS = 2.5 V
20
0.546 at V_GS = 1.8 V
1.100 at V_GS = 1.5 V
I_D (mA)
600
500
350
50
Q_g (Typ.)
0.75
SC-75A
G1
3D
S2
Top View
Ordering Information:
Si1012CR-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
• TrenchFET^® Power MOSFET: 1.2 V Rated
• 100 % R_g Tested
• Gate-Source ESD Protected: 1000 V
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• Load/Power Switching for Portable Devices
• Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
Memories
• Battery Operated Systems
• Power Supply Converter Circuits
Marking Code: K
ABSOLUTE MAXIMUM RATINGS (T_A = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain Current (T_J = 150 °C)^a
T_A = 25 °C
T_A = 70 °C
I_D
Pulsed Drain Current (t = 300 µs)
I_DM
Continuous Source-Drain Diode Current
T_A = 25 °C
I_S
Maximum Power Dissipation^a
T_A = 25 °C
T_A = 70 °C
P_D
Operating Junction and Storage Temperature Range
T_J, T_stg
Limit
20
±8
0.63^{a, b}
0.5^{a, b}
2
0.2^{a, b}
0.24^{a, b}
0.15^{a, b}
- 55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^b
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. t = 5 s.
t 5 s
Steady State
Symbol
R_thJA
Typical
440
540
Maximum
530
650
Unit
V
A
A
W
°C
Unit
°C/W
Document Number: 67519
For technical questions, contact: [e-mail]
www.vishay.com
S13-0195-Rev. E, 28-Jan-13
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000