SI1002R Datasheet, PDF (1/9 Pages) Vishay Telefunken – N-Channel 30 V (D-S) MOSFET

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N-Channel 30 V (D-S) MOSFET
Si1002R
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
30
R_DS(on) (Ω) MAX.
0.560 at V_GS = 4.5 V
0.620 at V_GS = 2.5 V
0.700 at V_GS = 1.8 V
1.100 at V_GS = 1.5 V
SC-75A
D
3
I_D (A)
0.5
0.2
0.2
0.05
Q_g (TYP.)
0.72 nC
2
S
1
G
Top View
Marking Code: L
Ordering Information:
Si1002R-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
• TrenchFET^® power MOSFET
• 100 % R_g tested
• Gate-source ESD protected: 1000 V
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• Load switch
D
• High speed switching
• DC/DC converters / boost converters
• For smart phones, tablet PCs and
mobile computing
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain Current (T_J = 150 °C) ^a
T_A = 25 °C
T_A = 70 °C
I_D
Pulsed Drain Current (t = 100 μs)
I_DM
Continuous Source-Drain Diode Current
T_A = 25 °C
I_S
Maximum Power Dissipation ^a
T_A = 25 °C
T_A = 70 °C
P_D
Operating Junction and Storage Temperature Range
T_J, T_stg
LIMIT
30
±8
0.61 ^a,b
0.49 ^a,b
2
0.18 ^a,b
0.22 ^a,b
0.14 ^a,b
-55 to 150
UNIT
V
A
A
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient ^b
Notes
a. Surface mounted on 1" x 1" FR4 board.
b. t = 5 s.
t≤5s
Steady State
SYMBOL
R_thJA
TYP.
470
560
MAX.
565
675
UNIT
°C/W
S14-0770-Rev. A, 14-Apr-14
1
Document Number: 64257
For technical questions, contact: [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000