BF961 Datasheet, PDF (1/7 Pages) Vishay Siliconix – N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode

BF961
Vishay Telefunken
N–Channel Dual Gate MOS-Fieldeffect Tetrode,
Depletion Mode
Electrostatic sensitive device.
Observe precautions for handling.
Applications
Input- and mixer stages especially for FM- and VHF TV-tuners up to 300 MHz.
Features
D Integrated gate protection diodes
D High cross modulation performance
D Low noise figure
D High AGC-range
D Low feedback capacitance
D Low input capacitance
3
4
G₂
D
2
G₁
94 9307
1
96 12647
BF961 Marking: BF961
Plastic case (TO 50)
S
12623
1=Drain, 2=Source, 3=Gate 1, 4=Gate 2
Absolute Maximum Ratings
T_amb = 25_C, unless otherwise specified
Parameter
Test Conditions
Drain - source voltage
Drain current
Gate 1/Gate 2 - source peak current
Total power dissipation
Channel temperature
T_amb ≤ 60 °C
Storage temperature range
Type
Symbol
Value
Unit
V_DS
20
V
I_D
30
mA
±I_G1/G2SM
10
mA
P_tot
200
mW
T_Ch
150
°C
T_stg –55 to +150 °C
Maximum Thermal Resistance
T_amb = 25_C, unless otherwise specified
Parameter
Test Conditions
Symbol
Value
Unit
Channel ambient on glass fibre printed board (40 x 25 x 1.5) mm³
R_thChA
450
K/W
plated with 35mm Cu
Document Number 85002
Rev. 3, 20-Jan-99
www.vishay.de • FaxBack [phone]
1 (7)