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2N7002K Datasheet, PDF (1/9 Pages) Vishay Siliconix – N-Channel 60-V (D-S) MOSFET | |||
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N-Channel 60-V (D-S) MOSFET
2N7002K
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
60
2 at VGS = 10 V
ID (mA)
300
TO-236
SOT-23
G1
3D
S2
Top View
2N7002K (7K)*
* Marking Code
Ordering Information: 2N7002K-T1
2N7002K-T1-E3 (Lead (Pb)-free)
2N7002K-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
⢠Halogen-free According to IEC 61249-2-21
Definition
⢠Low On-Resistance: 2 Ω
⢠Low Threshold: 2 V (typ.)
⢠Low Input Capacitance: 25 pF
⢠Fast Switching Speed: 25 ns
⢠Low Input and Output Leakage
⢠TrenchFET® Power MOSFET
⢠2000 V ESD Protection
⢠Compliant to RoHS Directive 2002/95/EC
BENEFITS
⢠Low Offset Voltage
⢠Low-Voltage Operation
⢠Easily Driven Without Buffer
⢠High-Speed Circuits
⢠Low Error Voltage
APPLICATIONS
⢠Direct Logic-Level Interface: TTL/CMOS
⢠Drivers: Relays, Solenoids, Lamps, Hammers, Display,
Memories, Transistors, etc.
⢠Battery Operated Systems
⢠Solid-State Relays
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)b
Pulsed Drain Currenta
Power Dissipationb
Maximum Junction-to-Ambientb
Operating Junction and Storage Temperature Range
TA = 25 °C
TA = 100 °C
TA = 25 °C
TA = 100 °C
VDS
VGS
ID
IDM
PD
RthJA
TJ, Tstg
Notes:
a. Pulse width limited by maximum junction temperature.
b. Surface Mounted on FR4 board.
Limit
60
± 20
300
190
800
0.35
0.14
350
- 55 to 150
Unit
V
mA
W
°C/W
°C
* Pb containing terminations are not RoHS compliant, exemptions may apply.
Document Number: 71333
S09-0857-Rev. E, 18-May-09
www.vishay.com
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